JPH0319700B2 - - Google Patents

Info

Publication number
JPH0319700B2
JPH0319700B2 JP57210548A JP21054882A JPH0319700B2 JP H0319700 B2 JPH0319700 B2 JP H0319700B2 JP 57210548 A JP57210548 A JP 57210548A JP 21054882 A JP21054882 A JP 21054882A JP H0319700 B2 JPH0319700 B2 JP H0319700B2
Authority
JP
Japan
Prior art keywords
comb
electrode
charge
parallel
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57210548A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58105573A (ja
Inventor
Uiremu Surotsutoboomu Yan
Anne Haauitsuhi Hendoriku
Yohanesu Maria Peruguromu Maruserinusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS58105573A publication Critical patent/JPS58105573A/ja
Publication of JPH0319700B2 publication Critical patent/JPH0319700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/82—Line monitoring circuits for call progress or status discrimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP57210548A 1981-11-30 1982-11-30 電荷結合メモリ装置 Granted JPS58105573A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8105397A NL8105397A (nl) 1981-11-30 1981-11-30 Ladingsgekoppelde inrichting.
NL8105397 1981-11-30

Publications (2)

Publication Number Publication Date
JPS58105573A JPS58105573A (ja) 1983-06-23
JPH0319700B2 true JPH0319700B2 (en]) 1991-03-15

Family

ID=19838466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57210548A Granted JPS58105573A (ja) 1981-11-30 1982-11-30 電荷結合メモリ装置

Country Status (11)

Country Link
US (1) US4669100A (en])
JP (1) JPS58105573A (en])
AU (1) AU550398B2 (en])
CA (1) CA1187612A (en])
DE (1) DE3243565A1 (en])
ES (1) ES8308450A1 (en])
FR (1) FR2517472B1 (en])
GB (1) GB2110874B (en])
IE (1) IE54240B1 (en])
IT (1) IT1208477B (en])
NL (1) NL8105397A (en])

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119182A (ja) * 1983-11-30 1985-06-26 Mitsubishi Electric Corp 固体撮像素子
JPS60183881A (ja) * 1984-03-01 1985-09-19 Mitsubishi Electric Corp 固体撮像素子
CN1031156A (zh) * 1987-07-10 1989-02-15 菲利浦光灯制造公司 电荷耦合器件
US4881250A (en) * 1987-07-10 1989-11-14 U.S. Philips Corp. Compact charge-coupled device having a conductive shielding layer
NL8702499A (nl) * 1987-10-20 1989-05-16 Philips Nv Halfgeleidergeheugen met een ladingsgekoppelde inrichting.
GB2211660A (en) * 1987-10-28 1989-07-05 Philips Nv A charge-coupled device de-interlacer
EP0712238B1 (en) * 1994-11-11 1999-10-20 SANYO ELECTRIC Co., Ltd. Solid-state image pickup device and method of driving the same
JP2877047B2 (ja) * 1995-10-25 1999-03-31 日本電気株式会社 固体撮像装置
US6269484B1 (en) 1997-06-24 2001-07-31 Ati Technologies Method and apparatus for de-interlacing interlaced content using motion vectors in compressed video streams
JP2002109881A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体集積回路
US7483577B2 (en) * 2004-03-02 2009-01-27 Mitsubishi Electric Research Laboratories, Inc. System and method for joint de-interlacing and down-sampling using adaptive frame and field filtering
US8115863B2 (en) * 2007-04-04 2012-02-14 Freescale Semiconductor, Inc. Video de-interlacer using pixel trajectory
US8964117B2 (en) * 2007-09-28 2015-02-24 Ati Technologies Ulc Single-pass motion adaptive deinterlacer and method therefore
US8300987B2 (en) * 2007-09-28 2012-10-30 Ati Technologies Ulc Apparatus and method for generating a detail-enhanced upscaled image
US8259228B2 (en) * 2007-12-10 2012-09-04 Ati Technologies Ulc Method and apparatus for high quality video motion adaptive edge-directional deinterlacing
US8396129B2 (en) * 2007-12-28 2013-03-12 Ati Technologies Ulc Apparatus and method for single-pass, gradient-based motion compensated image rate conversion

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967254A (en) * 1974-11-18 1976-06-29 Rca Corporation Charge transfer memory
GB1551935A (en) * 1976-08-19 1979-09-05 Philips Nv Imaging devices
JPS596111B2 (ja) * 1977-11-30 1984-02-09 株式会社東芝 エリアセンサ
US4211936A (en) * 1978-06-16 1980-07-08 Rca Corporation CCD Gate electrode structures and systems employing the same
US4376897A (en) * 1980-06-25 1983-03-15 International Business Machines Corp. Low voltage serial to parallel to serial charge coupled device
EP0060198A3 (en) * 1981-03-09 1985-05-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Serial-parallel-serial charge coupled device and method of transferring charge therein
CA1187177A (en) * 1981-03-09 1985-05-14 Kalyanasundaram Venkateswaran Serial-parallel-serial charge coupled device and method of transferring charge therein
US4493060A (en) * 1981-03-09 1985-01-08 Fairchild Camera & Instrument Corp. Serial-parallel-serial charged coupled device memory and a method of transferring charge therein

Also Published As

Publication number Publication date
FR2517472A1 (fr) 1983-06-03
IT1208477B (it) 1989-07-10
ES517701A0 (es) 1983-08-16
ES8308450A1 (es) 1983-08-16
NL8105397A (nl) 1983-06-16
AU9091282A (en) 1983-06-09
FR2517472B1 (fr) 1986-08-29
CA1187612A (en) 1985-05-21
IE822816L (en) 1983-05-30
IT8224474A0 (it) 1982-11-26
JPS58105573A (ja) 1983-06-23
IE54240B1 (en) 1989-08-02
AU550398B2 (en) 1986-03-20
GB2110874B (en) 1985-06-12
GB2110874A (en) 1983-06-22
US4669100A (en) 1987-05-26
DE3243565C2 (en]) 1991-10-17
DE3243565A1 (de) 1983-06-09

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